专利摘要:
An active material for the manufacture of laser rods, having the chemical composition expressed by the formula A1+xB1-yC3-xO7-0.5x, wherein A is barium, strontium, calcium, or a mixture thereof; B is lanthanum, yttrium, or a mixture thereof; C is gallium, aluminum, or a mixture thereof; and x and y assume both positive and negative values from -0.12 to +0.12;; and as a dopant an active element chosen from the group consisting of praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, erbium, thulium and ytterbium in an amount of from 0.02 to 8.33 atomic percent.
公开号:SU1609462A3
申请号:SU874202805
申请日:1987-06-26
公开日:1990-11-23
发明作者:Пекарчик Владислав;Берковски Марек;Яселэк Габрель;Рыба-Романовски Витольд;Хабера Мечислав
申请人:Польска Акадэмия Наук, Институт Физики (Инопредприятие);Польска Акадэмия Наук, Институт Ниских Температур И Бадань Структуральных (Инопредприятие);
IPC主号:
专利说明:

The invention relates to laser technology and can be used in the development of new laser materials.
The purpose of the invention is palucation of an aniche / zotropic laser substance with a higher activator concentration.
The essence of the invention is that the base of the laser substance is a single crystal of alkaline earth gallates and lanthanum. The chemical composition of this material is described by the general formula ABCjO, in which A is barium (Ba), strontium (Sr), or a mixture of them, B is lanthanum (La), C is gallium (Ga). Depending on the type of components and the conditions of manufacture of the material, its chemical composition may
deviate slightly from stoichiometry and conform to the formula
4-Y .sx where x and y can take positive or negative values in the range from 0 to 0.12. The active impurity in this laser substance is neodymium ion (Nd.).
Especially recommended as ak. For a laser rod, a barium-lanthanum-gallium-helenite single crystal material whose composition is described by the formula BaLaGa O- containing neodymium as an active impurity (BLGO: Nd). The advantages of this material over the known (YAGrNd) (YAG: Nd) are as follows.

sc
An admixture in a much larger amount can be introduced into the crystalline base than is possible with YAG: Nd.5
The distribution coefficient of neodymium in BLGO has a value close to 1. As a result, the impurity is distributed very uniformly in the single crystal, which is difficult to achieve in the case of
YAG: Nd. .
Single crystal growth rate. BLGO: Nd catches (on the order of 4 mm / h) turn out to be much more than four; ipocTb single crystal extrusion15
iYAGrM (on the order of 1 mm / h).
The melting point of BLGO (1560 ° C) is much lower than the melting point of YAG (1930 ° C). Due to this, as well as due to the high speed of drawing out single crystals, the iridium crucible is less worn in the process of drawing the crystal.
The BLGO: Nd crystal has one optical axis. Due to this, 25 of them can be used to manufacture laser elements (LEs) with the required gain factor (depending on the angle between the geometric axis of the laser rod and the optical axis of the active material), which can operate in the mode of a generator or a light amplifier and give fully linearly polarized light, which cannot be achieved in the case of isotropic YAG: Nd, s
BLGO crystals have the structure ge--; lent, which has no center of symmetry. Therefore, BLGO single crystals have piezoelectric properties. These properties can be used to design circuits for tuning the laser resonator.
Activated monocrystals of geonites are grown by melt crystallization using one of the well-known 45 Czochralski, Bridgmann methods or zone melting. The most convenient method of producing single crystals of gallium gelenites of alkaline earths and lanthanum with impurities of Nd ions is the method of drawing a single crystal from the melt by the Czochralski method. According to this method, the melt is obtained by melting in an iridium crucible a mixture of highly pure powder-like metal oxides that are part of the single crystal being grown. The composition of the melt is basically the same as the composition of the single crystal.
Permissible small deviations in the range of at.%. Instead of oxides, carbonates of those metals can be used, which decompose when heated, are converted to the corresponding oxides, and then melted. In the case of using carbonates, it is necessary to limit the rate of temperature increase in order to create conditions for their thermal decomposition.
Crystals produced by melt crystallization from the Czochralski method have a chemical composition slightly different from the stoichiometric composition. Their actual composition can be described by the formula A, 4-) cB -1 Cs-x + 7-o, 5x where X and y can take both positive and negative values depending on the type of single crystal components and crystallographic orientation. phase boundaries between the growing crystal and the melt, as well as the initial composition of the melt.
Example. The starting material consisting of 32.30 wt. BAGOj,. 22.94 ma.h. La, jOg, 0.57 mac. and 44.19 ma.ch. , in the form of thoroughly mixed powders, poured into an iridium crucible, which is then slowly heated by high-frequency induction currents in a device for growing single crystals by the Czochralski method. The material is heated under nitrogen to a temperature slightly higher than the melting point of BLGO. A monocrystalline oriented nucleus attached to the tube of 3 is lowered from above until contact with a. top melt, and then rise up at a speed of 4 mm / h while simultaneously rotating around a vertical axis. The diameter of the crystal increases with decreasing temperature until the desired size is obtained. Thereafter, the constant diameter of the drawable crystal is maintained automatically by controlling the mass of the drawn crystal. . The rotational speed of the nucleus depends on the diameter of the crystal being drawn.
In the case of a 20 mm diameter crystal drawn from a 40 mm diameter crucible, the rotational speed of the nucleus is 65-70 rpm. After the end of the stretching process, monocrystal516
the tall is removed from the surface of the melt, and then the medpenio is cooled to room temperature. The chemical composition B of the obtained crystal depends on the crystallographic direction of growth and on the initial composition of the melt. A crystal growing on the (001) plane has a composition that can be approximately described by the following formula: La 0.03 o, 1yr z.og Os.975 Studies of the obtained crystal showed that, in the cylindrical part, the crystal has no inclusions. It does not contain defects that impair its optical quality, namely, cracks, bubbles, and so on. The optimal crystal composition with an admixture is determined.
Sr o, 6 do, oq. -.og 6.98
d 5
6
权利要求:
Claims (1)
[1]
The invention of the laser substance on. mono basis .; crystals, activated by ions, characterized in that, in order to obtain an anisotropic laser substance with a higher concentration of activator, a single crystal of haplates of alkaline earths and lanthanum is used as the basis
formulas C, xt.
where A is barium, strontium, or a mixture thereof;
B - lanthanum; C - gallium
X and y are parameters that take positive or negative values in the range of 0-0.12,
0
and the number of ions Nd 0.02-0.33 at.%.
54 matches
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同族专利:
公开号 | 公开日
DD259645A5|1988-08-31|
FR2600832B1|1990-09-28|
PL148622B1|1989-11-30|
CS479087A2|1991-07-16|
FR2600832A1|1987-12-31|
US4820445A|1989-04-11|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题

US3480552A|1965-06-09|1969-11-25|Semi Elements Inc|Manufacture of materials capable of amplifying wave energy|
US3480877A|1966-03-23|1969-11-25|Bell Telephone Labor Inc|Solid state laser|
US3897358A|1971-03-01|1975-07-29|Gen Electric|Polycrystalline ceramic lasers|DE3930272C2|1988-10-05|1991-07-25|Impulsphysik Gmbh, 2000 Schenefeld, De|
JPH03183698A|1989-09-26|1991-08-09|Komatsu Ltd|Oxide single crystal base plate and superconductor device utilized therewith and production thereof|
US5117437A|1990-03-02|1992-05-26|The University Of Michigan|Continuous-wave pair-pumped laser system|
FR2678648A1|1991-07-04|1993-01-08|Centre Nat Rech Scient|Neodymium-doped gehlenite crystal and laser employing this crystal|
US5309452B1|1992-01-31|1998-01-20|Univ Rutgers|Praseodymium laser system|
US6212215B1|1995-03-24|2001-04-03|The Regents Of The University Of California|Hybrid solid state laser system using a neodymium-based master oscillator and an ytterbium-based power amplifier|
JP5966683B2|2012-06-29|2016-08-10|国立大学法人東京工業大学|Piezoelectric material, piezoelectric member, piezoelectric element and pressure sensor|
US9522827B2|2013-05-02|2016-12-20|Energy Storage Materials Llc|Piezoelectric material, piezoelectric member, piezoelectric element, and pressure sensor|
CN108823633A|2018-06-27|2018-11-16|中国科学院福建物质结构研究所|A kind of crystal optical fibre material|
法律状态:
优先权:
申请号 | 申请日 | 专利标题
PL1986260309A|PL148622B1|1986-06-27|1986-06-27|An active material for manufacturing laser bars|
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